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6673BZ - FDS6673BZ

Datasheet Summary

Description

This P-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench process that has been especially tailored to minimize the on-state resistance.

Features

  • Max rDS(on) = 7.8mΩ, VGS = -10V, ID = -14.5A.
  • Max rDS(on) = 12mΩ, VGS = -4.5V, ID = -12A.
  • Extended VGS range (-25V) for battery.

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Datasheet Details

Part number 6673BZ
Manufacturer Fairchild Semiconductor
File Size 436.00 KB
Description FDS6673BZ
Datasheet download datasheet 6673BZ Datasheet
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Full PDF Text Transcription

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www.DataSheet.co.kr FDS6673BZ P-Channel PowerTrench® MOSFET January 2006 FDS6673BZ P-Channel PowerTrench® MOSFET -30V, -14.5A, 7.8mΩ General Description This P-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench process that has been especially tailored to minimize the on-state resistance. This device is well suited for Power Management and load switching applications common in Notebook Computers and Portable Battery Packs. Features „ Max rDS(on) = 7.8mΩ, VGS = -10V, ID = -14.5A „ Max rDS(on) = 12mΩ, VGS = -4.5V, ID = -12A „ Extended VGS range (-25V) for battery applications „ HBM ESD protection level of 6.
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