6673BZ Datasheet | Fairchild Semiconductor

.Data Sheet.co.kr FDS6673BZ P-Channel Power Trench® MOSFET January 2006 FDS6673BZ P-Channel Power Trench® MOSFET -30V, -14.5A, 7.8mΩ General Description This P-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench process that has been especially tailored to minimize the on-state resistance. This device is well suited for Power Management and load switching applications mon in Notebook puters and Portable Battery Packs. Features - Max r DS(on) = 7.8mΩ, VGS = -10V, ID = -14.5A - Max r DS(on) = 12mΩ, VGS = -4.5V, ID = -12A - Extended VGS range (-25V) for battery applications - HBM ESD protection level of 6.5k V typical (note 3) - High performance trench technology for extremely low r DS(on) - High power and current handling capability - Ro HS pliant 5 6 4 3 2 1 SO-8 7 8 MOSFET Maximum Ratings TA = 25°C unless otherwise noted Symbol VDS VGS ID PD TJ, TSTG Operating and Storage Temperature Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous -Pulsed Power Dissipation for Single Operation (Note1a) (Note1b) (Note1c) (Note1a) Ratings -30 ±25 -14.5 -75 2.5 1.2 1.0 -55 to 150 °C W Units V V A A Thermal Characteristics RθJA RθJC Thermal Resistance , Junction to Ambient (Note 1a) Thermal Resistance , Junction to Case (Note 1) 50 25 °C/W °C/W Package Marking and Ordering Information Device Marking FDS6673BZ Device FDS6673BZ Reel Size 13’’ Tape Width 12mm Quantity 2500 units ©2006 Fairchild Semiconductor Corporation FDS6673BZ Rev. B .fairchildsemi. Datasheet pdf - http://..net/ .Data Sheet.co.kr FDS6673BZ P-Channel Power Trench®...