s High speed: fMAX = 185 MHz (typ) at VCC = 5V s Low power dissipation: ICC = 4 µA (max) at TA = 25°C s Synchronous counting and loading s High-speed synchronous expansio.

The VHC163 is an advanced high-speed CMOS device fabricated with silicon gate CMOS technology. It achieves the high-speed operation similar to equivalent Bipolar Schottky TTL while maintaining the CMOS low power dissipation. The VHC163 is a high-spee.

74VHC161

74VHC161284

74VHC164

74VHC165

74VHC112

74VHC123A

74VHC125

74VHC126

74VHC126-Q100

74VHC132

74VHC138

74VHC138FT

74VHC139