s High Speed: tPD 3.5 ns (typ) at VCC 5V s Low power dissipation: ICC 4 PA (max) at TA 25qC s High noise immunity: VNIH VNIL 28% VCC (min) s Power down protection is prov.

The VHC541 is an advanced high-speed CMOS device fabricated with silicon gate CMOS technology. It achieves the high-speed operation similar to equivalent Bipolar Schottky TTL while maintaining the CMOS low power dissipation. The VHC541 is an octal bu.

74VHC540

74VHC541-Q100

74VHC573

74VHC574

74VHC594

74VHC595

74VHC595-Q100

74VHC00

74VHC02

74VHC02-Q100

74VHC02M

74VHC02MTC

74VHC02SJ