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75321S - N-Channel MOSFET

Key Features

  • 35A, 55V.
  • Simulation Models - Temperature Compensated PSPICE® and SABER™ Models - Thermal Impedance SPICE and SABER Models Available on the WEB at: www. fairchildsemi. com.
  • Peak Current vs Pulse Width Curve.
  • UIS Rating Curve.
  • Related Literature - TB334, “Guidelines for Soldering Surface Mount Components to PC Boards” Symbol D G S JEDEC TO-263AB GATE SOURCE DRAIN (FLANGE) Product reliability information can be found at http://www. fairchildsemi. com/p.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Data Sheet HUF75321P3, HUF75321S3S December 2001 35A, 55V, 0.034 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET® process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge. It was designed for use in applications where power efficiency is important, such as switching regulators, switching converters, motor drivers, relay drivers, lowvoltage bus switches, and power management in portable and battery-operated products. Formerly developmental type TA75321.