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75344G - N-Channel MOSFET

Key Features

  • 75A, 55V.
  • Simulation Models - Temperature Compensated PSPICE® and SABER™ Models - Thermal Impedance PSPICE and SABER Models Available on the web at: www. fairchildsemi. com.
  • Peak Current vs Pulse Width Curve.
  • UIS Rating Curve.
  • Related Literature - TB334, “Guidelines for Soldering Surface Mount Components to PC Boards” Symbol D G S Packaging JEDEC STYLE TO-247 SOURCE DRAIN GATE JEDEC TO-220AB DRAIN (FLANGE) SOURCE DRAIN GATE DRAIN (TAB) Product r.

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Other Datasheets by Fairchild (now onsemi)

Part Number Description
75344P N-Channel MOSFET
75343G N-Channel MOSFET
75343P N-Channel MOSFET
75343S N-Channel MOSFET
75309 N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Data Sheet HUF75344G3, HUF75344P3 October 2013 N-Channel UltraFET Power MOSFET 55 V, 75 A, 8 mΩ These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible onresistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge. It was designed for use in applications where power efficiency is important, such as switching regulators, switching converters, motor drivers, relay drivers, low-voltage bus switches, and power management in portable and batteryoperated products. Formerly developmental type TA75344.