75344G Datasheet | Fairchild Semiconductor

Data Sheet HUF75344G3, HUF75344P3 October 2013 N-Channel Ultra FET Power MOSFET 55 V, 75 A, 8 mΩ These N-Channel power MOSFETs are manufactured using the innovative Ultra FET process. This advanced process technology achieves the lowest possible onresistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge. It was designed for use in applications where power efficiency is important, such as switching regulators, switching converters, motor drivers, relay drivers, low-voltage bus switches, and power management in portable and batteryoperated products. Formerly developmental type TA75344. Ordering Information PART NUMBER HUF75344G3 HUF75344P3 PACKAGE TO-247 TO-220AB BRAND 75344G 75344P Features - 75A, 55V - Simulation Models - Temperature pensated PSPICE® and SABER™ Models - Thermal Impedance PSPICE and SABER Models Available on the web at: .fairchildsemi. - Peak Current vs Pulse Width Curve - UIS Rating Curve - Related Literature - TB334, “Guidelines for Soldering Surface Mount ponents to PC Boards” Symbol Packaging JEDEC STYLE TO-247 SOURCE DRAIN GATE JEDEC TO-220AB DRAIN (FLANGE) SOURCE DRAIN GATE DRAIN (TAB) Product reliability information can be found at http://.fairchildsemi./products/discrete/reliability/index.html For severe environments, see our Automotive HUFA series. All Fairchild semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems certification. ©2004 Fairchild Semiconductor...