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BC517 NPN Darlington Transistor
January 2005
BC517
NPN Darlington Transistor
• This device is designed for applications requiring extremely high current gain at currents to 1.0A. • Sourced from process 05.
1
TO-92
1. Collector 2. Base 3. Emitter
Absolute Maximum Ratings *
Symbol
VCEO VCBO VEBO IC TJ, TSTG Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current
Ta = 25°C unless otherwise noted
Parameter
Value
30 40 10
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Units
V V V A °C
- Continuous
1.2 -55 ~ 150
Operating and Storage Junction Temperature Range
* These ratings are limiting values above which the serviceability of any semiconductor device may impaired. NOTES: 1. These ratings are based on a maximum junction temperature of 150 degrees C. 2.
BC517 Datasheet
