The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Darlington Transistors
NPN Silicon
Order this document by BC517/D
BC517
COLLECTOR 1
BASE 2
EMITTER 3
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector – Emitter Voltage
Collector – Base Voltage
Emitter – Base Voltage
Collector Current — Continuous
Total Power Dissipation @ TA = 25°C Derate above 25°C
VCES VCB VEB
IC PD
30 Vdc 40 Vdc 10 Vdc 1.0 Adc 625 mW 12 mW/°C
Total Power Dissipation @ TC = 25°C Derate above 25°C
PD
1.5 Watts 12 mW/°C
Operating and Storage Junction Temperature Range
TJ, Tstg – 55 to +150
°C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Ambient
RqJA 200 °C/W
Thermal Resistance, Junction to Case
RqJC
83.
BC517 Datasheet
