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Fairchild Semiconductor Electronic Components Datasheet

BD244A Datasheet

PNP Epitaxial Silicon Transistor

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BD244/A/B/C
Medium Power Linear and Switching
Applications
• Complement to BD243, BD243A, BD243B and BD243C respectively
1 TO-220
PNP Epitaxial Silicon Transistor
1.Base 2.Collector 3.Emitter
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol
Parameter
VCBO
Collector-Base Voltage
: BD244
: BD244A
: BD244B
: BD244C
VCEO
Collector-Emitter Voltage
: BD244
: BD244A
: BD244B
: BD244C
VEBO
IC
ICP
IB
PC
TJ
TSTG
Emitter-Base Voltage
Collector Current (DC)
*Collector Current (Pulse)
Base Current
Collector Dissipation (TC=25°C)
Junction Temperature
Storage Temperature
Electrical Characteristics TC=25°C unless otherwise noted
Symbol
Parameter
Test Condition
VCEO(sus)
* Collector-Emitter Sustaining Voltage
: BD244
: BD244A
: BD244B
: BD244C
IC = - 30mA, IB = 0
ICEO
ICES
IEBO
hFE
Collector Cut-off Current : BD244/244A
: BD244B/244C
Collector Cut-off Current : BD244
: BD244A
: BD244B
: BD244C
Emitter Cut-off Current
* DC Current Gain
VCE(sat)
* Collector-Emitter Saturation Voltage
VBE(on)
* Base-Emitter ON Voltage
* Pulse Test: PW =300µs, duty Cycle =2% Pulsed
VCE = - 30V, IB = 0
VCE = - 60V, IB = 0
VCE = - 45V, VBE = 0
VCE = - 60V, VBE = 0
VCE = - 80V, VBE = 0
VCE = - 100V, VBE = 0
VEB = - 5V, IC = 0
VCE = - 4V, IC = - 0.3A
VCE = - 4V, IC = - 3A
IC = - 6A, IB = - 1A
VCE = - 4V, IC = - 6A
Value
- 45
- 60
- 80
- 100
- 45
- 60
- 80
- 100
-5
-6
- 10
-2
65
150
- 65 ~ 150
Min. Typ.
- 45
- 60
- 80
- 100
30
15
Units
V
V
V
V
V
V
V
V
V
A
A
A
W
°C
°C
Max. Units
V
V
V
V
- 0.7 mA
- 0.7 mA
- 0.4 mA
- 0.4 mA
- 0.4 mA
- 0.4 mA
- 1 mA
- 1.5 V
-2 V
©2000 Fairchild Semiconductor International
Rev. A, February 2000


Fairchild Semiconductor Electronic Components Datasheet

BD244A Datasheet

PNP Epitaxial Silicon Transistor

No Preview Available !

Typical Characteristics
1000
VCE = 2V
100
10
-0.01
-0.1 -1
IC[A], COLLECTOR CURRENT
Figure 1. DC current Gain
-10
-1
IC = 10.1 IB
-0.1
-0.01
-0.1 -1 -10
IC[A], COLLECTOR CURRENT
Figure 3. Collector-Emitter Saturation Voltage
80
70
60
50
40
30
20
10
0
0 25 50 75 100 125 150 175 200
T[oC], CASE TEMPERATURE
Figure 5. Power Derating
©2000 Fairchild Semiconductor International
-1.8
-1.7
-1.6
-1.5
-1.4
-1.3
-1.2
-1.1
-1.0
-0.9
-0.8
-0.7
-0.6
-0.5
-0.1
IC = 10.1 IB
-1 -10
IC[A], COLLECTOR CURRENT
Figure 2. Base-Emitter Saturation Voltage
-100
-10
IC(max)
10ms
10µs
100µs
-1
-0.1
-1
BD244
BD244A
BD244B
BD244C
-10
-100
-1000
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 4. Safe Operating Area
Rev. A, February 2000


Part Number BD244A
Description PNP Epitaxial Silicon Transistor
Maker Fairchild Semiconductor
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BD244A Datasheet PDF






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