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Fairchild Semiconductor Electronic Components Datasheet

BSR15 Datasheet

PNP General Purpose Amplifier

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BSR15
PNP General Purpose Amplifier
• This device designed for use as general purpose amplifier and
switches requiring collector currents to 500mA.
• Sourced from Process 63.
• See BCW68G for Characteristics.
3
2
1 SOT-23
Mark: T7
1. Base 2. Emitter 3. Collector
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings* Ta=25°C unless otherwise noted
Symbol
Parameter
VCEO
Collector-Emitter Voltage
VCBO
Collector-Base Voltage
VEBO
Emitter-Base Voltage
IC
Collector Current
- Continuous
TJ, TST
Operating and Storage Junction Temperature Range
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Value
-40
-60
-5.0
-800
-55 ~ +150
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Units
V
V
V
mA
°C
©2002 Fairchild Semiconductor Corporation
Rev. B1, July 2002


Fairchild Semiconductor Electronic Components Datasheet

BSR15 Datasheet

PNP General Purpose Amplifier

No Preview Available !

Electrical Characteristics Ta=25°C unless otherwise noted
Symbol
Parameter
Test Condition
Off Characteristics
BV(BR)CEO
BV(BR)CBO
BV(BR)EBO
ICBO
Collector-Emitter Breakdown Voltage
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
ICEX
Collector Cut-off Current
IBEX Reverse Base Current
On Characteristics
IC = -10mA, IB = 0
IC = -100µA, IE = 0
IE = -10µA, IC = 0
VCB = -50V
VCB = -50V, TA = 150°C
VCE = -30V, VEB = -0.5V
VCE = -30V, VEB = -3.0V
hFE DC Current Gain
VCE(sat) Collector-Emitter Saturation Voltage
VBE(sat) Base-Emitter Saturation Voltage
Small Signal Characteristics
IC = -0.1mA, VCE = -10V
IC = -1.0mA, VCE = -10V
IC = -10mA, VCE= -10V
IC = -150mA, VCE = -10V
IC = -500mA, VCE = -10V
IC = -150mA, IB = -15mA
IC = -500mA, IB = -50mA
IC = -150mA, IB = -15mA
IC = -500mA, IB = -50mA
fT Current Gain Bandwidth Product
Ccb Output Capacitance
Ceb Emitter-Base Capacitance
Switching Characteristics
IC = -50mA, VCE = -20V,
f = 100MHz, TA = 25°C
VCB = -10V, IE = 0, f = 1.0MHz
VCB = -2.0V, IE = 0, f = 1.0MHz
ton Turn-On Time
td Delay Time
tr Rise Time
toff Turn-Off Time
ts Storage Time
tf Fall Time
VCC = -30V, IC = -150mA,
IB1 = -15mA
VCC = -30V, IC = -150mA,
IB1 = IB2 = -15mA
Min.
-40
-60
-5.0
35
50
75
100
30
200
Typ.
300
Max. Units
V
V
V
-20 nA
-20 µA
-50 nA
-50 nA
-0.4 V
-1.6 V
-1.3 V
-2.6 V
MHz
8.0 pF
30 pF
45 ns
10 ns
40 ns
100 ns
80 ns
30 ns
Thermal Characteristics TA=25°C unless otherwise noted
Symbol
Parameter
PD Total Device Dissipation
Derate above 25°C
RθJA
Thermal Resistance, Junction to Ambient
* Device mounted on FR-4 PCB 40mm × 40mm × 1.5mm
Max.
350
2.8
357
Units
mW
mW/°C
°C/W
©2002 Fairchild Semiconductor Corporation
Rev. B1, July 2002


Part Number BSR15
Description PNP General Purpose Amplifier
Maker Fairchild Semiconductor
Total Page 5 Pages
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