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PNP Matched Datasheet



Part Number Description Manufacture
A1270
PNP Silicon Transistor
ector Emitter Saturation Voltage at -IC=100mA,-IB=10mA Base Emitter Voltage at
  –VCE=1V,-IC=100mA Transition Frequency at -VCE=6V, -IC=20mA Collector Output Capacitance at -VCB=6V, f=1MHz hFE hFE hFE hFE -ICBO -IEBO -VCEsat -VBE fT COB 70 120 2
Manufacture
SEMTECH
2N3906
Silicon PNP Transistor
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 250mW Total Device Dissipation (TC = +255C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.5W Derate Above 255C . . . . . . . . . . . . . . . .
Manufacture
NTE
S9015
PNP Transistor
z High Total Power Dissipation.(PC=0.45W) z High hFE and Good Linearity z Complementary to S9014 TO-92 1.EMITTER 2. BASE 3. COLLECTOR MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage -50
Manufacture
JCST
A928A
PNP Epitaxial Silicon Transistor

• Audio Power Amplifier
• Complement to KSC2328A
• 3 W Output Application Ordering Information Part Number KSA928AOTA KSA928AYTA Top Mark A928A OA928A Y- 1 TO-92L 1. Emitter 2. Collector 3. Base Package TO-92 3L TO-92 3L Packing Method Ammo Am
Manufacture
Fairchild Semiconductor
S8550
PNP Transistor
z Complimentary to S8050 z Collector current: IC=0.5A MARKING : 2TY SOT-23 SS8 95051 02 1. BASE 2. EMITTER 3. COLLECTOR MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC PC Tj Tstg Parameter Collector-Base Voltage Collect
Manufacture
JinYu
A733
PNP Epitaxial Silicon Transistor
t V V V µA µA hFE CLASSIFICATION Classification hFE R 90-180 Q 135-270 P 200-400 K 300-600 Elite Enterprises (H.K.) Co., Ltd. Flat 2505, 25/F., Nanyang Plaza, 57 Hung To Road, Kwun Tong, H.K. Tel: (852) 2723-3122 Fax: (852) 2723-3990 Email: info@el
Manufacture
Elite
B688
SILICON PNP TRANSISTORS
Manufacture
UTC
NJW0302
PNP Transistor
ector-Emitter Breakdown Voltage IC= 30mA ; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 5.0A; IB= 0.5A VBE(on) Base−Emitter On Voltage IC = 5.0 A, VCE = 5.0 V ICBO Collector Cutoff Current VCB= 250V ; IE= 0 IEBO Emitter Cutoff Curr
Manufacture
INCHANGE
B772
PNP Silicon Transistor

 Low speed switching.
 Low saturation voltage.
 Excellent hFE linearity and high hFE.
 Complementary: D882. Pb Lead-free Production specification B772 APPLICATIONS
 Audio frequency power amplifier. TO-251 TO-252 MAXIMUM RATING @ Ta=25℃ unl
Manufacture
GME
C32725
PNP Transistor
„ High current „ Low voltage 1.3 Applications „ General-purpose switching and amplification 1.4 Quick reference data Table 2. Symbol VCEO IC ICM hFE Quick reference data Parameter Conditions collector-emitter voltage collector current (DC) op
Manufacture
ETC

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