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B647 - PNP Power Transistor

Key Features

  • High switching speed.
  • Wide safe operation area TEL:0755-29799516 FAX:0755-29799515 Http://www. jdsemi. cn E. Emitter C. Collector B. Base Absolute Maximum Ratings:( Tc=25℃ unless specified) Parameter Symbol Value Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage BVCEO BVCBO BVEBO ≥ -40 ≥ -60 ≥ -5 Collector Current Icm -2.0 Total Power Dissipation Pcm 12 Junction Temperature Tjm 150 Storage Temperature Tstg -55 ~ 150 Unit V V V A W ℃ ℃ Electronical Char.

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Datasheet Details

Part number B647
Manufacturer Jingdao
File Size 48.84 KB
Description PNP Power Transistor
Datasheet download datasheet B647 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Shenzhen Jingdao Electronic Co.,Ltd. B647 PNP Power Transistor *Applications : ◆ Electronical Ballasts for fluorescent lighting ◆ Charger and Switch mode power supplies *Features: ◆ High switching speed ◆ Wide safe operation area TEL:0755-29799516 FAX:0755-29799515 Http://www.jdsemi.cn E.Emitter C.Collector B.Base Absolute Maximum Ratings:( Tc=25℃ unless specified) Parameter Symbol Value Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage BVCEO BVCBO BVEBO ≥ -40 ≥ -60 ≥ -5 Collector Current Icm -2.