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NJW0281G - Complementary NPN?PNP Power Bipolar Transistors

Download the NJW0281G datasheet PDF. This datasheet also covers the NJW0302G variant, as both devices belong to the same complementary npn?pnp power bipolar transistors family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • Exceptional Safe Operating Area.
  • NPN/PNP Gain Matching within 10% from 50 mA to 3 A.
  • Excellent Gain Linearity.
  • High BVCEO.
  • High Frequency.
  • These Devices are Pb-Free and are RoHS Compliant Benefits.
  • Reliable Performance at Higher Powers.
  • Symmetrical Characteristics in Complementary Configurations.
  • Accurate Reproduction of Input Signal.
  • Greater Dynamic Range.
  • High Amplifier Bandwidth.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (NJW0302G_ONSemiconductor.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number NJW0281G
Manufacturer onsemi
File Size 170.59 KB
Description Complementary NPN?PNP Power Bipolar Transistors
Datasheet download datasheet NJW0281G Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Complementary NPN‐PNP Power Bipolar Transistors NJW0281G (NPN), NJW0302G (PNP) These complementary devices are lower power versions of the popular NJW3281G and NJW1302G audio output transistors. With superior gain linearity and safe operating area performance, these transistors are ideal for high fidelity audio amplifier output stages and other linear applications.