NJW0281 datasheet by Inchange Semiconductor.
| Part number | NJW0281 |
|---|---|
| Datasheet | NJW0281-INCHANGE.pdf |
| File Size | 211.05 KB |
| Manufacturer | Inchange Semiconductor |
| Description | NPN Transistor |
|
|
·High Collector-Emitter Breakdown Voltage- : 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor INCHANGE Semiconductor NJW0281 TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 30mA ; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 5.0A;.
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
 |
NJW0281G | Silicon NPN Power Transistor | Inchange Semiconductor |
 |
NJW0281G | Complementary NPN Power Bipolar Transistors | ON Semiconductor |
View all Inchange Semiconductor datasheets
| Part Number | Description |
|---|---|
| NJW0302 | PNP Transistor |
| NJW0302G | PNP Power Transistor |
| NJW1302G | PNP Transistor |
| NJW21193G | PNP Transistor |
| NJW21194G | NPN Transistor |
| NJW3281G | NPN Transistor |
| NJW44H11G | NPN Transistor |
