Datasheet Details
| Part number | NJW0281G |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 213.22 KB |
| Description | Silicon NPN Power Transistor |
| Datasheet | NJW0281G-InchangeSemiconductor.pdf |
|
|
Overview: isc Silicon NPN Power Transistor NJW0281G.
| Part number | NJW0281G |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 213.22 KB |
| Description | Silicon NPN Power Transistor |
| Datasheet | NJW0281G-InchangeSemiconductor.pdf |
|
|
|
·High Collector-Emitter Breakdown Voltage- : V(BR)CEO=250V(Min) ·Good Linearity of hFE ·plement to Type NJW0302G ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high fidelity audio amplifier and other linear applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 250 V VCEO Collector-Emitter Voltage 250 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 15 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 1.5 A 150 W 150 ℃ Tstg Storage Temperature Range -65~150 ℃ isc website：.iscsemi.
1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor NJW0281G ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 30mA ;
IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 5.0A;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
NJW0281G | Complementary NPN Power Bipolar Transistors | ON Semiconductor |
 |
NJW0281 | NPN Transistor | INCHANGE |
| Part Number | Description |
|---|