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NJW0281G - Silicon NPN Power Transistor

General Description

High Collector-Emitter Breakdown Voltage- : V(BR)CEO=250V(Min) Good Linearity of hFE Complement to Type NJW0302G Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high fidelity audio amplifier and other linear applic

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isc Silicon NPN Power Transistor NJW0281G DESCRIPTION ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO=250V(Min) ·Good Linearity of hFE ·Complement to Type NJW0302G ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high fidelity audio amplifier and other linear applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 250 V VCEO Collector-Emitter Voltage 250 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 15 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 1.5 A 150 W 150 ℃ Tstg Storage Temperature Range -65~150 ℃ isc website：www.iscsemi.