NJW0281G
Overview
High Collector-Emitter Breakdown Voltage- : V(BR)CEO=250V(Min) Good Linearity of hFE Complement to Type NJW0302G Minimum Lot-to-Lot variations for robust device performance and reliable operation.
| Part | NJW0281G |
|---|---|
| Description | Silicon NPN Power Transistor |
| Category | Transistor |
| Manufacturer | Inchange Semiconductor |
| Size | 213.22 KB |