Datasheet Summary
isc Silicon NPN Power Transistor
DESCRIPTION
- High Collector-Emitter Breakdown Voltage-
: V(BR)CEO=250V(Min)
- Good Linearity of hFE
- plement to Type NJW0302G
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
- Designed for high fidelity audio amplifier and other linear...
