KEC KTN2907AS
EPITAXIAL PLANAR PNP TRANSISTOR
FEATURES
Low Leakage Current : ICEX=-50nA(Max.) ; VCE=-30V, VEB=-0.5V. Low Saturation Voltage : VCE(sat)=-0.4V(Max.) ; IC=-150mA, IB=-15mA. Complementary to the KTN2222S/2222AS. MAXIMUM RATING (Ta=25 ) CHARACTERISTIC RATING SYMBOL UNIT KTN2907S KTN2907AS Collector-Base Voltage VCBO -60 V Collector-Emitter Voltage VCEO -40 -60 V Emitter-Base Voltage VEBO -5 V Collector Current Collector Power Dissipation (Ta=25 ) Junction Temperature IC PC Tj -600 mA 350 mW 150 Storage Temperature Range Tstg -55 150 * Package Mounted On 99.5% Alumina 10x8x0.6mm. KTN2907S/AS EPITAXIAL PLANAR PNP TRANSISTOR E L BL DIM MILLIMETERS A 2.93+_ 0.20 B 1.30+0.20/-0.15 A G H D 23 C 1.30 MAX D 0.40+0.15/-0.05 E 2.40+0.30/-0.20 1 G 1.90 H 0.95 J 0.13+0.10/-0.05 K 0.00 ~ 0.10 Q PP L 0.55 M 0.20 MIN N 1.00+0.20/-0.10 C N K J P7 Q 0.1 MAX M 1. EMITTER 2. BASE 3. COLLECTOR SOT-23 Marking Type Name ZD Lot No. ZHType Name Lot No. MARK SPEC TYPE KTN2907S KTN2907AS MARK ZD ZH 2002. 4. 9 Revision No : 4 1/4 KTN2907S/AS ELEC...