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KTN2907A - EPITAXIAL PLANAR PNP TRANSISTOR

Download the KTN2907A datasheet PDF. This datasheet also covers the KTN2907 variant, as both devices belong to the same epitaxial planar pnp transistor family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • Low Leakage Current : ICEX=-50nA(Max. ) ; VCE=-30V, VEB=-0.5V. Low Saturation Voltage : VCE(sat)=-0.4V(Max. ) ; IC=-150mA, IB=-15mA. Complementary to the KTN2222/2222A. KTN2907/2907A Electrically Similar to 2N2907/2907A. KTN2907/A.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (KTN2907-KEC.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number KTN2907A
Manufacturer KEC
File Size 726.47 KB
Description EPITAXIAL PLANAR PNP TRANSISTOR
Datasheet download datasheet KTN2907A Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
SEMICONDUCTOR TECHNICAL DATA GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES Low Leakage Current : ICEX=-50nA(Max.) ; VCE=-30V, VEB=-0.5V. Low Saturation Voltage : VCE(sat)=-0.4V(Max.) ; IC=-150mA, IB=-15mA. Complementary to the KTN2222/2222A. KTN2907/2907A Electrically Similar to 2N2907/2907A. KTN2907/A EPITAXIAL PLANAR PNP TRANSISTOR MAXIMUM RATING (Ta=25 ) CHARACTERISTIC RATING SYMBOL UNIT KTN2907 KTN2907A Collector-Base Voltage VCBO -60 V Collector-Emitter Voltage VCEO -40 -60 V Emitter-Base Voltage VEBO -5 V Collector Current Collector Power Dissipation (Ta=25 ) Junction Temperature IC PC Tj -600 mA 625 mW 150 Storage Temperature Range Tstg -55 150 1999. 4.