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KTN2907U - EPITAXIAL PLANAR PNP TRANSISTOR

Key Features

  • Low Leakage Current : ICEX=-50nA(Max. ) ; VCE=-30V, VEB=-0.5V. Low Saturation Voltage : VCE(sat)=-0.4V(Max. ) ; IC=-150mA, IB=-15mA. Complementary to the KTN2222U/2222AU.

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Datasheet Details

Part number KTN2907U
Manufacturer KEC
File Size 359.64 KB
Description EPITAXIAL PLANAR PNP TRANSISTOR
Datasheet download datasheet KTN2907U Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SEMICONDUCTOR TECHNICAL DATA GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES Low Leakage Current : ICEX=-50nA(Max.) ; VCE=-30V, VEB=-0.5V. Low Saturation Voltage : VCE(sat)=-0.4V(Max.) ; IC=-150mA, IB=-15mA. Complementary to the KTN2222U/2222AU. MAXIMUM RATING (Ta=25 ) CHARACTERISTIC RATING SYMBOL UNIT KTN2907U KTN2907AU Collector-Base Voltage VCBO -60 V Collector-Emitter Voltage VCEO -40 -60 V Emitter-Base Voltage VEBO -5 V Collector Current Collector Power Dissipation (Ta=25 ) Junction Temperature IC PC Tj -600 mA 100 mW 150 Storage Temperature Range Tstg -55 150 KTN2907U/AU EPITAXIAL PLANAR PNP TRANSISTOR A J G E MBM DIM MILLIMETERS DA 2.00+_ 0.20 2 B 1.25+_ 0.15 13 C 0.90+_ 0.10 D 0.3+0.10/-0.05 E 2.10 +_ 0.20 G 0.65 P H 0.15+0.1/-0.