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SEMICONDUCTOR
TECHNICAL DATA
GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION.
FEATURES Low Leakage Current : ICEX=-50nA(Max.) ; VCE=-30V, VEB=-0.5V. Low Saturation Voltage : VCE(sat)=-0.4V(Max.) ; IC=-150mA, IB=-15mA. Complementary to the KTN2222S/2222AS.
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
RATING
SYMBOL
UNIT
KTN2907S KTN2907AS
Collector-Base Voltage
VCBO
-60
V
Collector-Emitter Voltage
VCEO
-40
-60 V
Emitter-Base Voltage
VEBO
-5
V
Collector Current Collector Power Dissipation
(Ta=25 ) Junction Temperature
IC PC Tj
-600 mA 350 mW 150
Storage Temperature Range
Tstg
-55 150
* Package Mounted On 99.5% Alumina 10x8x0.6mm.
KTN2907S/AS
EPITAXIAL PLANAR PNP TRANSISTOR
E L BL
DIM MILLIMETERS A 2.93+_ 0.20
B 1.30+0.20/-0.15
A G H
D
23
C 1.30 MAX D 0.40+0.15/-0.
KTN2907S Datasheet
