900,000+ datasheet pdf search and download

Datasheet4U offers most rated semiconductors data sheet pdf




Fairchild Semiconductor Electronic Components Datasheet

BSS138W Datasheet

N-Channel Logic Level Enhancement Mode Field Effect Transistor

No Preview Available !

December 2010
BSS138W
N-Channel Logic Level Enhancement Mode Field Effect Transistor
General Description
These N-Channel enhancement mode field effect
transistor. These products have been designed to
minimize on-state resistance while provide rugged,
reliable, and fast switching performance.These prod-
ucts are particularly suited for low voltage, low current
applications such as small servo motor control, power
MOSFET gate drivers, and other switching applica-
tions.
Features
• RDS(ON) = 3.5Ω @ VGS = 10V, ID = 0.22A
RDS(ON) = 6.0Ω @ VGS = 4.5V, ID = 0.22A
• High density cell design for extremely low RDS(ON)
• Rugged and Reliable
• Compact industry standard SOT-323 surface mount
package
D
S
G
SOT-323
Marking : 138
Absolute Maximum Ratings TA = 25°C unless otherwise noted
Symbol
Parameter
VDSS
VGSS
ID
Drain-Source Voltage
Gate-Source Voltage
Drain Current
- Continuous
- Pulsed
(Note1)
TJ, TSTG
TL
Operating and Storage Junction Temperature Range
Maximum Lead Temperature for Soldering
Purposes, 1/16” from Case for 10 Seconds
Value
50
±20
0.21
0.84
-55 to +150
300
Thermal Characteristics
Symbol
PD
RθJA
Parameter
Maximum Power Dissipation
Derate Above 25°C
Thermal Resistance, Junction to Ambient
(Note1)
(Note1)
Package Marking and Ordering Information
Device Marking
138
Device
BSS138W
Reel Size
7’’
Value
340
2.72
367
Tape width
8mm
Units
V
V
A
A
°C
°C
Units
mW
mW/°C
°C/W
Quantity
3000 units
© 2010 Fairchild Semiconductor Corporation
BSS138W Rev. A0
1
www.fairchildsemi.com
http://www.Datasheet4U.com


Fairchild Semiconductor Electronic Components Datasheet

BSS138W Datasheet

N-Channel Logic Level Enhancement Mode Field Effect Transistor

No Preview Available !

Electrical Characteristics TA = 25°C unless otherwise noted
Symbol
Parameter
Test Condition
Off Characteristics
BVDSS Drain-Source Breakdown Voltage VGS = 0V, ID = 250μA
ΔBVDSS Breakdown Voltage Temperature ID = 250μA, Referenced to 25°C
ΔTJ Coefficient
IDSS
Zero Gate Voltage Drain Current VDS = 50V, VGS = 0V
VDS = 50V, VGS = 0V, TJ = 125°C
VDS = 30V, VGS = 0V
IGSS Gate-Body Leakage
VGS = ±20V, VDS = 0V
On Characteristics (Note2)
VGS(th)
ΔVGS(th)
ΔTJ
RDS(ON)
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
Static Drain-Source
On-Resistance
ID(ON) On-State Drain Current
gFS Forward Transconductance
Dynamic Characteristics
VDS = VGS, ID = 1mA
ID = 1mA, Referenced to 25°C
VGS = 10V, ID = 0.22A
VGS = 4.5V, ID = 0.22A
VGS = 10V, ID = 0.22A, TJ=125°C
VGS = 10V, VDS = 5V
VDS = 10V, ID = 0.22A
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
RG Gate Resistance
Switching Characteristics (Note2)
VDS = 25V, VGS = 0V, f = 1.0MHz
VGS = 15mV, f = 1.0MHz
td(on) Turn-On Delay Time
tr
td(off)
Turn-On Rise Time
Turn-Off Delay Time
VDD = 30V, ID = 0.29A,
VGS = 10V, RGEN = 6Ω
tf Turn-Off Fall Time
Qg Total Gate Change
Qgs Gate-Source Change
Qgd Gate-Drain Change
VDS = 25V, ID = 0.22A,
VGS = 10V
Drain-Source Diode Characteristics and Maximum Ratings
IS Maximum Continuous Drain–Source Diode Forward Current
VSD Drain-Source Diode Forward
Voltage
VGS = 0V, IS = 0.44A (Note2)
Min.
50
0.8
0.2
0.12
Notes:
1. 367°C/W when mounted on a minimum pad.
2. Pulse Test: Pulse Width 300μs, Duty Cycle 2.0%
Typ.
71
1.3
-3.9
1.17
1.36
2.16
38
5.9
3.5
11
2.3
1.9
6.7
6.5
1.1
0.12
0.22
Max. Units
V
mV/°C
0.5
5
100
±100
μA
μA
nA
nA
1.5 V
mV/°C
3.5 Ω
6.0 Ω
5.8 Ω
A
S
pF
pF
pF
Ω
5 ns
18 ns
36 ns
14 ns
nC
nC
nC
0.22 A
1.4 V
© 2010 Fairchild Semiconductor Corporation
BSS138W Rev. A0
2
www.fairchildsemi.com
http://www.Datasheet4U.com


Part Number BSS138W
Description N-Channel Logic Level Enhancement Mode Field Effect Transistor
Maker Fairchild Semiconductor
Total Page 6 Pages
PDF Download

BSS138W Datasheet PDF

View PDF for Mobile








Similar Datasheet

1 BSS138 N-Channel MOSFET
JCET
2 BSS138 MOSFET
Silikron Semiconductor
3 BSS138 N-Channel Power Mosfet
GME
4 BSS138 N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET
Zetex Semiconductors
5 BSS138 SIPMOS Small-Signal Transistor (N channel Enhancement mode Logic Level)
Siemens Semiconductor Group
6 BSS138 N-Channel Logic Level Enhancement Mode Field Effect Transistor
Fairchild Semiconductor
7 BSS138 N-Channel Enhancement Mode Field Effect Transistor
Chino-Excel Technology
8 BSS138 N-CHANNEL ENHANCEMENT MODE MOSFET
Diodes Incorporated
9 BSS138 N-Channel Logic Level Enhancement Mode Field Effect Transistor
ON Semiconductor





Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z

Site map

Webmaste! click here

Contact us

Buy Components

Privacy Policy