BSS138W Datasheet and Specifications PDF

It utilizes the latest processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating. These features combine to make this design an extrem.

and Benefits:
* Advanced MOSFET process technology
* Special designed for PWM, load switching and general purpose applications
* Ultra low on-resistance with low gate charge
* Fast switching and reverse body recovery
* ESD Rating：1000V HBM
* 150℃ operating temperature BSS138W Marking and Pin Assi.

These N−Channel Enhancement Mode Field Effect Transistor. These products have been Designed to minimize on−state resistance while provide rugged, reliable, and fast switching performance. These produc.

* RDS(on) = 3.5 W @ VGS = 10 V, ID = 0.22 A RDS(on) = 6.0 W @ VGS = 4.5 V, ID = 0.22 A
* High Density Cell Design For Extremely Low RDS(on)
* Rugged and Reliable
* Compact Industry Standard SOT
*323 Surface Mount Package
* These Devices are Pb
*Free and Halide Free ABSOLUTE MAXIMUM RATINGS TA = 25°C .

These N-Channel enhancement mode field effect transistor. These products have been designed to minimize on-state resistance while provide rugged, reliable, and fast switching performance.These product.

* RDS(ON) = 3.5Ω @ VGS = 10V, ID = 0.22A RDS(ON) = 6.0Ω @ VGS = 4.5V, ID = 0.22A
* High density cell design for extremely low RDS(ON)
* Rugged and Reliable
* Compact industry standard SOT-323 surface mount package D S G SOT-323 Marking : 138 Absolute Maximum Ratings Symbol VDSS VGSS ID TJ, TSTG .

SIPMOS® Small-Signal-Transistor Features • N-channel • Enhancement mode • Logic level • dv /dt rated • Pb-free lead-plating; RoHS compliant • Qualified according to AEC Q101 • Halogen-free according t.

* N-channel
* Enhancement mode
* Logic level
* dv /dt rated
* Pb-free lead-plating; RoHS compliant
* Qualified according to AEC Q101
* Halogen-free according to IEC61249-2-21 Product Summary V DS R DS(on),max ID BSS138W 60 V 3.5 Ω 0.28 A PG-SOT-323 Type BSS138W BSS138W Package PG-SOT-323 PG-SOT.