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N-Channel Logic Level Enhancement Mode Field Effect Transistor
BSS138K
Features
• Low On−Resistance • Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • Ultra−Small Surface Mount Package • Green Compound • ESD HBM = 2000 V as per JEDEC A114A;
ESD CDM = 2000 V as per JEDEC C101C
• This Device is Pb−Free and is RoHS Compliant
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) (Note 1)
Symbol
Parameter
Value
Unit
VDSS VGSS
ID
Drain−Source Voltage Gate−Source Voltage Drain Current – Continuous Drain Current – Pulsed
50
V
±12
V
0.22
A
0.88
PD Total Device Dissipation
350
mV
Derating above TA = 25°C
2.
BSS138K Datasheet
