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Fairchild Semiconductor Electronic Components Datasheet

FCA20N60 Datasheet

N-Channel MOSFET

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August 2014
FCA20N60
N-Channel SuperFET® MOSFET
600 V, 20 A, 190 mΩ
Features
• 650V @ TJ = 150°C
• Typ. RDS(on) = 150 mΩ
• Ultra Low Gate Charge (Typ. Qg = 75 nC )
• Low Effective Output Capacitance (Typ. Coss(eff.) = 165 pF )
• 100% Avalanche Tested
Applications
• Solar Inverter
• AC-DC Power Supply
Description
SuperFET® MOSFET is Fairchild Semiconductor’s first genera-
tion of high voltage super-junction (SJ) MOSFET family that is
utilizing charge balance technology for outstanding low on-
resistance and lower gate charge performance. This technology
is tailored to minimize conduction loss, provide superior switch-
ing performance, dv/dt rate and higher avalanche energy. Con-
sequently, SuperFET MOSFET is very suitable for the switching
power applications such as PFC, server/telecom power, FPD
TV power, ATX power and industrial power applications.
D
G
D
S
TO-3PN
G
MOSFET Maximum Ratings TC = 25oC unless otherwise noted.
S
Symbol
VDSS
VGSS
ID
IDM
EAS
IAR
EAR
dv/dt
PD
TJ, TSTG
TL
Parameter
Drain to Source Voltage
Gate-Soure voltage
Drain Current
Drain Current
- Continuous (TC = 25oC)
- Continuous (TC = 100oC)
- Pulsed
(Note 1)
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
Power Dissipation
(TC = 25oC)
- Derate Above 25oC
(Note 3)
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering, 1/8” from Case for 5 Seconds
Thermal Characteristics
Symbol
RθJC
RθJA
Parameter
Thermal Resistance, Junction to Case, Max.
Thermal Resistance, Junction to Ambient, Max.
FCA20N60 /
FCA20N60_F109
600
±30
20
12.5
60
690
20
20.8
4.5
208
1.67
-55 to +150
300
FCA20N60 /
FCA20N60_F109
0.6
41.7
Unit
V
V
A
A
mJ
A
mJ
V/ns
W
W/oC
oC
oC
Unit
oC/W
©2008 Fairchild Semiconductor Corporation
FCA20N60 Rev. C0
1
www.fairchildsemi.com


Fairchild Semiconductor Electronic Components Datasheet

FCA20N60 Datasheet

N-Channel MOSFET

No Preview Available !

Package Marking and Ordering Information
Part Number
FCA20N60
FCA20N60_F109
Top Mark
FCA20N60
FCA20N60
Package
TO-3PN
TO-3PN
Packing Method
Tube
Tube
Reel Size
N/A
N/A
Tape Width
N/A
N/A
Electrical Characteristics TC = 25oC unless otherwise noted.
Symbol
Parameter
Test Conditions
Off Characteristics
BVDSS
ΔBVDSS
/ ΔTJ
BVDS
IDSS
IGSS
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Drain-Source Avalanche Breakdown
Voltage
Zero Gate Voltage Drain Current
Gate to Body Leakage Current
ID = 250 μA, VGS = 0 V, TJ = 25oC
ID = 250 μA, VGS = 0 V, TJ = 150oC
ID = 250 μA, Referenced to 25oC
VGS = 0 V, ID = 20 A
VDS = 600 V, VGS = 0 V
VDS = 480 V, TC = 125oC
VGS = ±30 V, VDS = 0 V
On Characteristics
VGS(th)
RDS(on)
gFS
Gate Threshold Voltage
Static Drain to Source On Resistance
Forward Transconductance
VGS = VDS, ID = 250 μA
VGS = 10 V, ID = 10 A
VDS = 40 V, ID = 10 A
Dynamic Characteristics
Ciss
Coss
Crss
Coss
Coss(eff.)
Qg
Qgs
Qgd
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Effective Output Capacitance
Total Gate Charge at 10V
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
VDS = 25 V, VGS = 0 V,
f = 1 MHz
VDS = 480 V, VGS = 0 V, f = 1 MHz
VDS = 0 V to 400 V, VGS = 0 V
VDS = 480 V, ID = 20 A,
VGS = 10 V
(Note 4)
Switching Characteristics
td(on)
tr
td(off)
tf
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
VDD = 300 V, ID = 20 A,
VGS = 10 V, RG = 25 Ω
(Note 4)
Drain-Source Diode Characteristics
IS Maximum Continuous Drain to Source Diode Forward Current
ISM Maximum Pulsed Drain to Source Diode Forward Current
VSD
Drain to Source Diode Forward Voltage
VGS = 0 V, ISD = 20 A
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
VGS = 0 V, ISD = 20 A,
dIF/dt = 100 A/μs
Notes:
1: Repetitive rating: pulse-width limited by maximum junction temperature.
2: IAS = 10 A, VDD = 50 V, RG = 25 Ω, starting TJ = 25°C.
3: ISD 20 A, di/dt 200 A/μs, VDD BVDSS, starting TJ = 25°C.
4: Essentially independent of operating temperature typical characteristics.
Min.
600
-
-
-
-
-
-
3.0
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
-
650
0.6
700
-
-
-
-
0.15
17
2370
1280
95
65
165
75
13.5
36
62
140
230
65
-
-
-
530
10.5
Quantity
30 units
30 units
Max. Unit
-V
-V
- V/oC
-
1
10
±100
V
μA
nA
5.0 V
0.19 Ω
-S
3080
1665
-
85
-
98
18
-
pF
pF
pF
pF
pF
nC
nC
nC
135 ns
290 ns
470 ns
140 ns
20 A
60 A
1.4 V
- ns
- μC
©2008 Fairchild Semiconductor Corporation
FCA20N60 Rev. C0
2
www.fairchildsemi.com


Part Number FCA20N60
Description N-Channel MOSFET
Maker Fairchild Semiconductor
Total Page 8 Pages
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