Datasheet Summary
- N-Channel SuperFET® MOSFET
August 2014
N-Channel SuperFET® MOSFET
600 V, 20 A, 190 mΩ
Features
- 650V @ TJ = 150°C
- Typ. RDS(on) = 150 mΩ
- Ultra Low Gate Charge (Typ. Qg = 75 nC )
- Low Effective Output Capacitance (Typ. Coss(eff.) = 165 pF )
- 100% Avalanche Tested
Applications
- Solar Inverter
- AC-DC Power Supply
Description
SuperFET® MOSFET is Fairchild Semiconductor’s first generation of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low onresistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and...
