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FCA20N60 Datasheet N-channel MOSFET

Manufacturer: onsemi

Overview: MOSFET – N-Channel, SUPERFET) 600 V, 20 A, 190 mW FCA20N60.

General Description

SUPERFET MOSFET is onsemi’s first generation of high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on− resistance and lower gate charge performance.

This technology is tailored to minimize conduction loss, provide superior switch− ing performance, dv/dt rate and higher avalanche energy.

Con− sequently, SuperFET MOSFET is very suitable for the switching power applications such as PFC, server/tele power, FPD TV power, ATX power and industrial power applications.

Key Features

  • 650 V @ TJ = 150°C.
  • Typ. RDS(on) = 150 mW.
  • Ultra Low Gate Charge (Typ. Qg = 75 nC).
  • Low Effective Output Capacitance (Typ. Coss(eff. ) = 165 pF ).
  • 100% Avalanche Tested.
  • This Device is Pb.
  • Free.

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