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FCA20N60S - N-Channel MOSFET

General Description

SuperFETTM is, Farichild’s proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance.

Key Features

  • 650V @TJ = 150°C.
  • Typ. Rds(on)=0.22Ω.
  • Ultra low gate charge (typ. Qg=55nC).
  • Low effective output capacitance (typ. Coss. eff=110pF).
  • 100% avalanche tested.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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FCA20N60S / FCA20N60S_F109 600V N-Channel MOSFET FCA20N60S / FCA20N60S_F109 600V N-Channel MOSFET August 2007 SuperFETTM Features • 650V @TJ = 150°C • Typ. Rds(on)=0.22Ω • Ultra low gate charge (typ. Qg=55nC) • Low effective output capacitance (typ. Coss.eff=110pF) • 100% avalanche tested Description SuperFETTM is, Farichild’s proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy.