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FCA20N60F datasheet preview
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FCA20N60F Key Features

  • 650 V @ TJ = 150°C
  • Typ. RDS(on) = 150 mΩ
  • Fast Recovery Type (Typ. Trr = 160 ns )
  • Ultra Low Gate Charge (Typ. Qg = 75 nC )
  • Low Effective Output Capacitance (Typ. Coss(eff.) = 165 pF )
  • 100% Avalanche Tested
  • RoHS pliant

Other FCA20N60F Datasheets

Manufacturer Part Number Description
ON Semiconductor Logo onsemi FCA20N60 N-Channel MOSFET

FCA20N60F Description

RDS(on) = 150 mΩ Fast Recovery Type (Typ. Trr = 160 ns ) Ultra Low Gate Charge (Typ. Qg = 75 nC ) Low Effective Output Capacitance (Typ.