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Fairchild Semiconductor Electronic Components Datasheet

FCA20N60S Datasheet

N-Channel MOSFET

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FCA20N60S / FCA20N60S_F109
600V N-Channel MOSFET
August 2007
SuperFETTM
Features
• 650V @TJ = 150°C
• Typ. Rds(on)=0.22
• Ultra low gate charge (typ. Qg=55nC)
• Low effective output capacitance (typ. Coss.eff=110pF)
• 100% avalanche tested
Description
SuperFETTM is, Farichild’s proprietary, new generation of high
voltage MOSFET family that is utilizing an advanced charge
balance mechanism for outstanding low on-resistance and
lower gate charge performance.
This advanced technology has been tailored to minimize
conduction loss, provide superior switching performance, and
withstand extreme dv/dt rate and higher avalanche energy.
Consequently, SuperFET is very suitable for various AC/DC
power conversion in switching mode operation for system
miniaturization and higher efficiency.
D
GDS
TO-3P
FCA Series
Absolute Maximum Ratings
Symbol
VDSS
ID
IDM
VGSS
EAS
IAR
EAR
dv/dt
PD
TJ, TSTG
TL
Parameter
Drain-Source Voltage
Drain Current
Drain Current
- Continuous (TC = 25°C)
- Continuous (TC = 100°C)
- Pulsed
(Note 1)
Gate-Source voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
Power Dissipation
(TC = 25°C)
- Derate above 25°C
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
*Drain current limited by maximum junction temperature
Thermal Characteristics
Symbol
RθJC
RθJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
©2007 Fairchild Semiconductor Corporation
FCA20N60S / FCA20N60S_F109 REV. A2
1
G
S
FCA20N60S
600
20
12.7
60
± 30
450
20
26
4.5
260
2.1
-55 to +150
300
Unit
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
°C
FCA20N60S
0.48
41.7
Unit
°C/W
°C/W
www.fairchildsemi.com


Fairchild Semiconductor Electronic Components Datasheet

FCA20N60S Datasheet

N-Channel MOSFET

No Preview Available !

Package Marking and Ordering Information
Device Marking Device
FCA20N60S
FCA20N60S
FCA20N60S
FCA20N60S_F109
Package
TO-3P
TO-3PN
Reel Size
-
-
Tape Width
-
-
Quantity
30
30
Electrical Characteristics TC = 25°C unless otherwise noted
Symbol
Parameter
Conditions
Min
Off Characteristics
BVDSS
Drain-Source Breakdown Voltage
BVDSS
/ TJ
BVDS
Breakdown Voltage Temperature
Coefficient
Drain-Source Avalanche Breakdown
Voltage
VGS = 0V, ID = 250µA, TJ = 25°C
VGS = 0V, ID = 250µA, TJ = 150°C
ID = 250µA, Referenced to 25°C
VGS = 0V, ID = 20A
600
--
--
--
IDSS Zero Gate Voltage Drain Current
IGSSF
Gate-Body Leakage Current, Forward
IGSSR
Gate-Body Leakage Current, Reverse
On Characteristics
VDS = 600V, VGS = 0V
VDS = 480V, TC = 125°C
VGS = 30V, VDS = 0V
VGS = -30V, VDS = 0V
--
--
--
--
VGS(th)
RDS(on)
Gate Threshold Voltage
Static Drain-Source
On-Resistance
VDS = VGS, ID = 250µA
VGS = 10V, ID = 10A
3.0
--
gFS Forward Transconductance
Dynamic Characteristics
VDS = 40V, ID = 10A
(Note 4) --
Ciss Input Capacitance
Coss
Output Capacitance
Crss Reverse Transfer Capacitance
Coss
Output Capacitance
Coss eff. Effective Output Capacitance
Switching Characteristics
VDS = 25V, VGS = 0V,
f = 1.0MHz
VDS = 480V, VGS = 0V, f = 1.0MHz
VDS = 0V to 400V, VGS = 0V
--
--
--
--
--
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
VDD = 300V, ID = 20A
RG = 25
VDS = 480V, ID = 20A
VGS = 10V
Drain-Source Diode Characteristics and Maximum Ratings
(Note 4, 5)
(Note 4, 5)
--
--
--
--
--
--
--
IS Maximum Continuous Drain-Source Diode Forward Current
ISM Maximum Pulsed Drain-Source Diode Forward Current
VSD Drain-Source Diode Forward Voltage VGS = 0V, IS = 20A
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
VGS = 0V, IS = 20A
dIF/dt =100A/µs
(Note 4)
--
--
--
--
--
Typ
--
650
0.6
700
--
--
--
--
--
0.22
11.5
1730
960
85
45
110
46
140
175
100
57
11.5
28
--
--
--
450
8.2
Max Units
-- V
-- V
-- V/°C
--
1
10
100
-100
V
µA
µA
nA
nA
5.0 V
0.26
-- S
2250
1150
--
60
--
pF
pF
pF
pF
pF
90 ns
280 ns
350 ns
200 ns
72 nC
14 nC
-- nC
20 A
60 A
1.4 V
-- ns
-- µC
NOTES:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. IAS = 8A, VDD = 50V, RG = 25, Starting TJ = 25°C
3. ISD 20A, di/dt 200A/µs, VDD BVDSS, Starting TJ = 25°C
4. Pulse Test: Pulse width 300µs, Duty Cycle 2%
5. Essentially Independent of Operating Temperature Typical Characteristics
FCA20N60S / FCA20N60S_F109 REV. A2
2
www.fairchildsemi.com


Part Number FCA20N60S
Description N-Channel MOSFET
Maker Fairchild Semiconductor
Total Page 9 Pages
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