Datasheet Summary
FCA20N60S / FCA20N60S_F109 600V N-Channel MOSFET
FCA20N60S / FCA20N60S_F109
600V N-Channel MOSFET
August 2007
SuperFETTM
Features
- 650V @TJ = 150°C
- Typ. Rds(on)=0.22Ω
- Ultra low gate charge (typ. Qg=55nC)
- Low effective output capacitance (typ. Coss.eff=110pF)
- 100% avalanche tested
Description
SuperFETTM is, Farichild’s proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy....
