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FCA20N60S_F109 - N-Channel MOSFET

Download the FCA20N60S_F109 datasheet PDF. This datasheet also covers the FCA20N60S variant, as both devices belong to the same n-channel mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

SuperFETTM is, Farichild’s proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance.

Key Features

  • 650V @TJ = 150°C.
  • Typ. Rds(on)=0.22Ω.
  • Ultra low gate charge (typ. Qg=55nC).
  • Low effective output capacitance (typ. Coss. eff=110pF).
  • 100% avalanche tested.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (FCA20N60S_FairchildSemiconductor.pdf) that lists specifications for multiple related part numbers.

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Other Datasheets by Fairchild (now onsemi)

Part Number Description
FCA20N60S N-Channel MOSFET
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
FCA20N60S / FCA20N60S_F109 600V N-Channel MOSFET FCA20N60S / FCA20N60S_F109 600V N-Channel MOSFET August 2007 SuperFETTM Features • 650V @TJ = 150°C • Typ. Rds(on)=0.22Ω • Ultra low gate charge (typ. Qg=55nC) • Low effective output capacitance (typ. Coss.eff=110pF) • 100% avalanche tested Description SuperFETTM is, Farichild’s proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy.