FCA36N60NF Datasheet - Fairchild Semiconductor

N-Channel MOSFET

FCA36N60NF Features

* RDS(on) = 80 mΩ (Typ.) @ VGS = 10V, ID = 18 A

* Ultra Low Gate Charge (Typ. Qg = 86 nC)

* Low Effective Output Capacitance (Typ. Coss(eff.) = 338 pF)

* 100% Avalanche Tested

* RoHS Compliant Application

* Solar Inverter

* AC-DC Power Supply

FCA36N60NF General Description

The SupreMOS® MOSFET is Fairchild Semiconductor’s next generation of high voltage super-junction (SJ) technology employing a deep trench filling process that differentiates it from the conventional SJ MOSFETs. This advanced technology and precise process control provides lowest Rsp on-resistance, su.

FCA36N60NF Datasheet (666.18 KB)

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FCA36N60NF

Manufacturer:

Fairchild Semiconductor

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666.18 KB

Description:

N-channel mosfet.

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FCA36N60NF N-Channel MOSFET Fairchild Semiconductor

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FCA36N60NF Features

FCA36N60NF General Description

Datasheet Details

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