FCB20N60 Key Features
- 650 V @TJ = 150 °C
- Typ. RDS(on) = 150 m
- Ultra Low Gate Charge (Typ. Qg = 75 nC)
- Low Effective Output Capacitance (Typ. Coss.eff = 165 pF)
- 100% Avalanche Tested
- RoHS pliant
- Lighting
- Solar Inverter
- AC-DC Power Supply
- Part: FCB20N60
- Manufacturer: Fairchild (official site)
- Size: 368.55 KB
Other FCB20N60 Datasheets
| Manufacturer | Part Number | Description |
|---|---|---|
onsemi |
FCB20N60F-F085 | N-Channel MOSFET |
FCB20N60 Description
SuperFET® MOSFET is Fairchild Semiconductor’s first generation of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low onresistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SuperFET MOSFET is very suitable for the...