FCB20N60 mosfet equivalent, n-channel mosfet.
* 650 V @TJ = 150 °C
* Typ. RDS(on) = 150 m
* Ultra Low Gate Charge (Typ. Qg = 75 nC)
* Low Effective Output Capacitance (Typ. Coss.eff = 165 pF)
* 1.
such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications.
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SuperFET® MOSFET is Fairchild Semiconductor’s first generation of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low onresistance and lower gate charge performance. This technology is tailor.
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