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FCB20N60F-F085 - N-Channel MOSFET

General Description

lower gate charge performance.

Key Features

  • Typ rDS(on) = 171mΩ at VGS = 10V, ID = 20A.
  • Typ Qg(tot) = 78nC at VGS = 10V, ID = 20A.
  • UIS Capability.
  • RoHS Compliant.
  • Qualified to AEC Q101.

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FCB20N60F-F085 N-Channel MOSFET FCB20N60F-F085 N-Channel MOSFET 600V, 20A, 190mΩ Features „ Typ rDS(on) = 171mΩ at VGS = 10V, ID = 20A „ Typ Qg(tot) = 78nC at VGS = 10V, ID = 20A „ UIS Capability „ RoHS Compliant „ Qualified to AEC Q101 Description SuperFETTM is ON Semiconductor’s proprietary new generation of high voltage MOSFETs utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. Consequently, SuperFET is suitable for various automotive DC/DC power conversion.