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FCB099N65S3 - N-Channel MOSFET

Datasheet Summary

Description

SUPERFET III MOSFET is ON Semiconductor’s brand new high voltage super junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on

resistance and lower gate charge performance.

Features

  • 700 V @ TJ = 150°C.
  • Typ. RDS(on) = 79 mW.
  • Ultra Low Gate Charge (Typ. Qg = 61 nC).
  • Low Effective Output Capacitance (Typ. Coss(eff. ) = 544 pF).
  • 100% Avalanche Tested.
  • These Devices are Pb.
  • Free and are RoHS Compliant.

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Datasheet Details

Part number FCB099N65S3
Manufacturer ON Semiconductor
File Size 324.32 KB
Description N-Channel MOSFET
Datasheet download datasheet FCB099N65S3 Datasheet
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Full PDF Text Transcription

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MOSFET – Power, N-Channel, SUPERFET III, Easy Drive 650 V, 30 A, 99 mW FCB099N65S3 Description SUPERFET III MOSFET is ON Semiconductor’s brand−new high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provides superior switching performance, and withstand extreme dv/dt rate. Consequently, SUPERFET III MOSFET Easy drive series helps manage EMI issues and allows for easier design implementation. Features • 700 V @ TJ = 150°C • Typ. RDS(on) = 79 mW • Ultra Low Gate Charge (Typ. Qg = 61 nC) • Low Effective Output Capacitance (Typ. Coss(eff.
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