FCD850N80Z Key Features
- Typ. RDS(on) = 710 mTyp.)
- Ultra Low Gate Charge (Typ. Qg = 22 nC)
- Low Eoss (Typ. 2.3 uJ @ 400V)
- Low Effective Output Capacitance (Typ. Coss(eff.) = 106 pF)
- 100% Avalanche Tested
- RoHS pliant
- ESD Improved Capability
- Part: FCD850N80Z
- Description: MOSFET
- Manufacturer: Fairchild Semiconductor
- Size: 955.23 KB
Other FCD850N80Z Datasheets
| Manufacturer | Part Number | Description |
|---|---|---|
Inchange Semiconductor |
FCD850N80Z | N-Channel MOSFET |