FCD850N80Z Datasheet - Fairchild Semiconductor

MOSFET

FCD850N80Z Features

* Typ. RDS(on) = 710 mTyp.)

* Ultra Low Gate Charge (Typ. Qg = 22 nC)

* Low Eoss (Typ. 2.3 uJ @ 400V)

* Low Effective Output Capacitance (Typ. Coss(eff.) = 106 pF)

* 100% Avalanche Tested

* RoHS Compliant

* ESD Improved Capability Applicatio

FCD850N80Z General Description

SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switchi.

FCD850N80Z Datasheet (955.23 KB)

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FCD850N80Z

Manufacturer:

Fairchild Semiconductor

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955.23 KB

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Mosfet.
FCD850N80Z / FCU850N80Z N-Channel SuperFET® II MOSFET October 2014 FCD850N80Z / FCU850N80Z N-Channel SuperFET® II MOSFET 800 V, 6 A, 850 .

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FCD850N80Z MOSFET Fairchild Semiconductor

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FCD850N80Z Features

FCD850N80Z General Description

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