FCH130N60 Key Features
- 650 V @ TJ = 150°C
- Typ. RDS(on) = 112 m
- Ultra Low Gate Charge (Typ. Qg = 54 nC)
- Low Effective Output Capacitance (Typ. Coss(eff.) = 240 pF)
- 100% Avalanche Tested
- RoHS pliant
| Manufacturer | Part Number | Description |
|---|---|---|
| FCH130N60 | N-Channel MOSFET | |
Inchange Semiconductor |
FCH130N60 | N-Channel MOSFET |