FCH170N60 Key Features
- 650 V @TJ = 150°C
- Typ. RDS(on) = 150 m
- Ultra Low Gate Charge (Typ. Qg = 42 nC)
- Low Effective Output Capacitance (Typ. Coss(eff.) = 190 pF)
- 100% Avalanche Tested
- RoHS pliant
| Manufacturer | Part Number | Description |
|---|---|---|
Inchange Semiconductor |
FCH170N60 | N-Channel MOSFET |
| FCH170N60 | N-Channel MOSFET |