FCH170N60 Description
SUPERFET II MOSFET is onsemi’s brand−new high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. Consequently, SUPERFET II MOSFET is suitable for...
FCH170N60 Key Features
- 650 V @ TJ = 150°C
- Typ. RDS(on) = 150 mW
- Ultra Low Gate Charge (Typ. Qg = 42 nC)
- Low Effective Output Capacitance (Typ. Coss(eff.) = 190 pF)
- 100% Avalanche Tested
- This Device is Pb-Free, Halide Free and is RoHS pliant