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FCH170N60 - N-Channel MOSFET

Datasheet Summary

Description

SUPERFET II MOSFET is onsemi’s brand new high voltage super junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on

resistance and lower gate charge performance.

Features

  • 650 V @ TJ = 150°C.
  • Typ. RDS(on) = 150 mW.
  • Ultra Low Gate Charge (Typ. Qg = 42 nC).
  • Low Effective Output Capacitance (Typ. Coss(eff. ) = 190 pF).
  • 100% Avalanche Tested.
  • This Device is Pb.
  • Free, Halide Free and is RoHS Compliant.

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Datasheet Details

Part number FCH170N60
Manufacturer ON Semiconductor
File Size 347.81 KB
Description N-Channel MOSFET
Datasheet download datasheet FCH170N60 Datasheet
Additional preview pages of the FCH170N60 datasheet.

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Full PDF Text Transcription

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MOSFET – N-Channel, SUPERFET) II 600 V, 22 A, 170 mW FCH170N60 Description SUPERFET II MOSFET is onsemi’s brand−new high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. Consequently, SUPERFET II MOSFET is suitable for various AC/DC power conversion for system miniaturization and higher efficiency. Features • 650 V @ TJ = 150°C • Typ. RDS(on) = 150 mW • Ultra Low Gate Charge (Typ. Qg = 42 nC) • Low Effective Output Capacitance (Typ. Coss(eff.
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