FCH170N60 Datasheet PDF - Fairchild Semiconductor MOSFET Specs

FCH170N60 - MOSFET

Datasheet Summary

Description

SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance.

Features

650 V @TJ = 150°C.
Typ. RDS(on) = 150 m.
Ultra Low Gate Charge (Typ. Qg = 42 nC).
Low Effective Output Capacitance (Typ. Coss(eff. ) = 190 pF).
100% Avalanche Tested.
RoHS Compliant.

Datasheet Details

Part number	FCH170N60
Manufacturer	Fairchild Semiconductor
File Size	571.02 KB
Description	MOSFET
Datasheet	FCH170N60 Datasheet
Additional preview pages of the FCH170N60 datasheet.

📁 Similar Datasheet

FCH170N60 - N-Channel MOSFET (INCHANGE)

FCH170N60 - N-Channel MOSFET (ON Semiconductor)

FCH104N60 - N-Channel MOSFET (INCHANGE)

FCH104N60F - N-Channel MOSFET (ON Semiconductor)

FCH104N60F-F085 - N-Channel MOSFET (ON Semiconductor)

FCH10A03L - Schottky Barrier Diode (Kyocera)

FCH10A03L - Schottky Barrier Diode (Nihon Inter Electronics)

FCH10A04 - Schottky Barrier Diode (Nihon Inter Electronics)

FCH10A045 - Dual Common Cathode Schottky Barrier Rectifier (Thinki Semiconductor)

FCH10A06 - Schottky Barrier Diode (Nihon Inter Electronics Corporation)

Full PDF Text Transcription

Click to expand full text

FCH170N60 — N-Channel SuperFET® II MOSFET FCH170N60 N-Channel SuperFET® II MOSFET 600 V, 22 A, 170 m July 2014 Features • 650 V @TJ = 150°C • Typ. RDS(on) = 150 m • Ultra Low Gate Charge (Typ. Qg = 42 nC) • Low Effective Output Capacitance (Typ. Coss(eff.) = 190 pF) • 100% Avalanche Tested • RoHS Compliant Applications • Telecom / Sever Power Supplies • Industrial Power Supplies • AC-DC Power Supply Description SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance.

Published: Jan 16, 2017 |