FCH190N65F Key Features
- 700 V @ TJ = 150°C
- Typ. RDS(on) = 168 mΩ
- Ultra Low Gate Charge (Typ. Qg = 60 nC)
- Low Effective Output Capacitance (Typ. Coss(eff.) = 304 pF)
- 100% Avalanche Tested
- RoHS pliant
- Part: FCH190N65F
- Description: MOSFET
- Manufacturer: Fairchild Semiconductor
- Size: 1.28 MB
Other FCH190N65F Datasheets
| Manufacturer | Part Number | Description |
|---|---|---|
onsemi |
FCH190N65F | N-Channel MOSFET |
|
onsemi |
FCH190N65F-F085 | N-Channel MOSFET |