FCH190N65F Datasheet - Fairchild Semiconductor

MOSFET

FCH190N65F Features

* 700 V @ TJ = 150°C

* Typ. RDS(on) = 168 mΩ

* Ultra Low Gate Charge (Typ. Qg = 60 nC)

* Low Effective Output Capacitance (Typ. Coss(eff.) = 304 pF)

* 100% Avalanche Tested

* RoHS Compliant Applications

* LCD / LED / PDP TV

* Telecom /

FCH190N65F General Description

SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switchi.

FCH190N65F Datasheet (1.28 MB)

FCH190N65F Datasheet Preview — Preview of FCH190N65F PDF

Datasheet Details

Part number:

FCH190N65F

Manufacturer:

Fairchild Semiconductor

File Size:

1.28 MB

Description:

Mosfet.
FCH190N65F N-Channel SuperFET® II FRFET® MOSFET FCH190N65F N-Channel SuperFET® II FRFET® MOSFET 650 V, 20.6 A, 190 mΩ December 2014 Featu.

📁 Related Datasheet

FCH190N65F N-Channel MOSFET (ON Semiconductor)

FCH190N65F-F085 N-Channel MOSFET (ON Semiconductor)

FCH104N60 N-Channel MOSFET (Fairchild Semiconductor)

FCH104N60 N-Channel MOSFET (INCHANGE)

FCH104N60F MOSFET (Fairchild Semiconductor)

FCH104N60F N-Channel MOSFET (ON Semiconductor)

FCH104N60F-F085 N-Channel MOSFET (ON Semiconductor)

FCH10A03L Schottky Barrier Diode (Kyocera)

FCH10A03L Schottky Barrier Diode (Nihon Inter Electronics)

FCH10A04 Schottky Barrier Diode (Nihon Inter Electronics)

TAGS

FCH190N65F MOSFET Fairchild Semiconductor

Image Gallery

FCH190N65F Features

FCH190N65F General Description

Datasheet Details

File Size:

Description:

FCH190N65F Distributor