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FCH190N65F-F085 - N-Channel MOSFET

General Description

SUPERFET II MOSFET is ON Semiconductor’s brand new high voltage super junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on

resistance and lower gate charge performance.

Key Features

  • Typ. RDS(on) = 148 mW at VGS = 10 V, ID = 10 A.
  • Typ. Qg(tot) = 63 nC at VGS = 10 V, ID = 10 A.
  • UIS Capability.
  • AEC.
  • Q101 Qualified and PPAP Capable.
  • These Devices are Pb.
  • Free and are RoHS Compliant.

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Full PDF Text Transcription for FCH190N65F-F085 (Reference)

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MOSFET – N-Channel, SUPERFET) II, FRFET) 650 V, 20.6 A, 190 mW FCH190N65F-F085 Description SUPERFET II MOSFET is ON Semiconductor’s brand−new high voltage super−junction ...

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II MOSFET is ON Semiconductor’s brand−new high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently SUPERFET II is very well suited for the Soft switching and Hard Switching topologies like High Voltage Full Bridge and Half Bridge DC−DC, Interleaved Boost PFC, Boost PFC for HEV−EV automotive. SUPERFET II, FRFET MOSFET’s optimized body diode reverse recovery performance can re

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