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FCH190N65F-F085 - N-Channel MOSFET

Datasheet Summary

Description

SUPERFET II MOSFET is ON Semiconductor’s brand new high voltage super junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on

resistance and lower gate charge performance.

Features

  • Typ. RDS(on) = 148 mW at VGS = 10 V, ID = 10 A.
  • Typ. Qg(tot) = 63 nC at VGS = 10 V, ID = 10 A.
  • UIS Capability.
  • AEC.
  • Q101 Qualified and PPAP Capable.
  • These Devices are Pb.
  • Free and are RoHS Compliant.

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Datasheet preview – FCH190N65F-F085

Datasheet Details

Part number FCH190N65F-F085
Manufacturer ON Semiconductor
File Size 415.49 KB
Description N-Channel MOSFET
Datasheet download datasheet FCH190N65F-F085 Datasheet
Additional preview pages of the FCH190N65F-F085 datasheet.

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Full PDF Text Transcription

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MOSFET – N-Channel, SUPERFET) II, FRFET) 650 V, 20.6 A, 190 mW FCH190N65F-F085 Description SUPERFET II MOSFET is ON Semiconductor’s brand−new high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently SUPERFET II is very well suited for the Soft switching and Hard Switching topologies like High Voltage Full Bridge and Half Bridge DC−DC, Interleaved Boost PFC, Boost PFC for HEV−EV automotive. SUPERFET II, FRFET MOSFET’s optimized body diode reverse recovery performance can remove additional component and improve system reliability.
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