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FCH104N60F - N-Channel MOSFET

Datasheet Summary

Description

SUPERFET II MOSFET is onsemi’s brand new high voltage super junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on

resistance and lower gate charge performance.

Features

  • 650 V @ TJ = 150°C.
  • Typ. RDS(on) = 98 mW.
  • Ultra Low Gate Charge (Typ. Qg = 107 nC).
  • Low Effective Output Capacitance (Typ. Coss(eff. ) = 109 pF).
  • 100% Avalanche Tested.
  • This Device is Pb.
  • Free, Halide Free and is RoHS Compliant.

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Datasheet Details

Part number FCH104N60F
Manufacturer ON Semiconductor
File Size 336.17 KB
Description N-Channel MOSFET
Datasheet download datasheet FCH104N60F Datasheet
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Full PDF Text Transcription

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MOSFET – N-Channel, SUPERFET) II, FRFET) 600 V, 37 A, 104 mW FCH104N60F Description SUPERFET II MOSFET is onsemi’s brand−new high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SUPERFET II MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications. SUPERFET II FRFET MOSFET’s optimized body diode reverse recovery performance can remove additional component and improve system reliability. Features • 650 V @ TJ = 150°C • Typ.
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