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FCH104N60F — N-Channel SuperFET® II FRFET® MOSFET
FCH104N60F
N-Channel SuperFET® II FRFET® MOSFET
600 V, 37 A, 104 mΩ
December 2014
Features
• 650 V @ TJ = 150°C • Typ. RDS(on) = 98 mΩ • Ultra Low Gate Charge (Typ. Qg = 107 nC) • Low Effective Output Capacitance (Typ. Coss(eff.) = 109 pF) • 100% Avalanche Tested
• RoHS Compliant
Description
SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy.