FCH104N60F Datasheet | Fairchild Semiconductor

- N-Channel SuperFET® II FRFET® MOSFET N-Channel SuperFET® II FRFET® MOSFET 600 V, 37 A, 104 mΩ December 2014 Features - 650 V @ TJ = 150°C - Typ. RDS(on) = 98 mΩ - Ultra Low Gate Charge (Typ. Qg = 107 nC) - Low Effective Output Capacitance (Typ. Coss(eff.) = 109 pF) - 100% Avalanche Tested - RoHS pliant Description SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche...