FCH104N60 Datasheet | Fairchild Semiconductor

- N-Channel SuperFET® II MOSFET N-Channel SuperFET® II MOSFET 600 V, 37 A, 104 mΩ June 2014 Features - 650 V @ TJ = 150°C - Typ. RDS(on) = 96 mΩ - Ultra Low Gate Charge (Typ. Qg = 63 nC) - Low Effective Output Capacitance (Typ. Coss(eff.) = 280 pF) - 100% Avalanche Tested - RoHS pliant Applications - Tele / Sever Power Supplies - Industrial Power Supplies Description SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide...