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FCH104N60 - N-Channel MOSFET

Datasheet Summary

Features

  • With TO-247 packaging.
  • Drain Source Voltage- : VDSS ≥ 600V.
  • Static drain-source on-resistance: RDS(on) ≤ 104mΩ@VGS=10V.
  • 100% avalanche tested.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation.

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Datasheet preview – FCH104N60

Datasheet Details

Part number FCH104N60
Manufacturer INCHANGE
File Size 356.62 KB
Description N-Channel MOSFET
Datasheet download datasheet FCH104N60 Datasheet
Additional preview pages of the FCH104N60 datasheet.

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Full PDF Text Transcription

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isc N-Channel MOSFET Transistor FCH104N60 ·FEATURES ·With TO-247 packaging ·Drain Source Voltage- : VDSS ≥ 600V ·Static drain-source on-resistance: RDS(on) ≤ 104mΩ@VGS=10V ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Power supply ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 600 V VGSS Gate-Source Voltage ±20 V ID Drain Current-Continuous;@Tc=25℃ 37 A IDM Drain Current-Single Pulsed 111 A PD Total Dissipation 357 W Tj Operating Junction Temperature -55~150 ℃ Tstg Storage Temperature -55~150 ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(ch-c) Channel-to-case thermal resistance MAX UNIT 0.
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