FCH76N60N Datasheet - Fairchild Semiconductor

MOSFET

FCH76N60N Features

* RDS(on) = 28 mΩ (Typ.) @ VGS = 10 V, ID = 38 A

* Ultra Low Gate Charge (Typ. Qg = 218 nC)

* Low Effective Output Capacitance (Typ. Coss(eff.) = 914 pF)

* 100% Avalanche Tested

* RoHS Compliant Application

* Solar Inverter

* AC-DC Power Supply

FCH76N60N General Description

The SupreMOS® MOSFET is Fairchild Semiconductor’s next generation of high voltage super-junction (SJ) technology employing a deep trench filling process that differentiates it from the conventional SJ MOSFETs. This advanced technology and precise process control provides lowest Rsp on-resistance, su.

FCH76N60N Datasheet (573.06 KB)

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FCH76N60N

Manufacturer:

Fairchild Semiconductor

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573.06 KB

Description:

Mosfet.

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FCH76N60N MOSFET Fairchild Semiconductor

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FCH76N60N Features

FCH76N60N General Description

Datasheet Details

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