FCH76N60NF Datasheet - Fairchild Semiconductor

MOSFET

FCH76N60NF Features

* RDS(on) = 28.7 mΩ (Typ.) @ VGS = 10 V, ID = 38 A

* Ultra Low Gate Charge (Typ. Qg = 230 nC)

* Low Effective Output Capacitance (Typ. Coss(eff.) = 896 pF)

* 100% Avalanche Tested

* RoHS Compliant Application

* Solar Inverter

* AC-DC Power Supp

FCH76N60NF General Description

The SupreMOS® MOSFET is Fairchild Semiconductor’s next generation of high voltage super-junction (SJ) technology employing a deep trench filling process that differentiates it from the conventional SJ MOSFETs. This advanced technology and precise process control provides lowest Rsp on-resistance, su.

FCH76N60NF Datasheet (576.28 KB)

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FCH76N60NF

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Fairchild Semiconductor

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Mosfet.

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FCH76N60NF MOSFET Fairchild Semiconductor

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FCH76N60NF Features

FCH76N60NF General Description

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