Datasheet Summary
( DataSheet : .. )
FCI7N60 600V N-Channel MOSFET
July 2005
SuperFET
600V N-Channel MOSFET
Features
- 650V @TJ = 150°C
- Typ. RDS(on) = 0.53Ω
- Ultra Low Gate Charge (typ. Qg = 25nC)
- Low Effective Output Capacitance (typ. Cosseff. = 60pF)
- 100% Avalanche Tested
Description
SuperFETTM is, Farichild’s proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy....