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FCI7N60 - 600V N-Channel MOSFET

General Description

SuperFETTM is, Farichild’s proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance.

Key Features

  • 650V @TJ = 150°C.
  • Typ. RDS(on) = 0.53Ω.
  • Ultra Low Gate Charge (typ. Qg = 25nC).
  • Low Effective Output Capacitance (typ. Cosseff. = 60pF).
  • 100% Avalanche Tested TM.

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( DataSheet : www.DataSheet4U.com ) FCI7N60 600V N-Channel MOSFET July 2005 SuperFET FCI7N60 600V N-Channel MOSFET Features • 650V @TJ = 150°C • Typ. RDS(on) = 0.53Ω • Ultra Low Gate Charge (typ. Qg = 25nC) • Low Effective Output Capacitance (typ. Cosseff. = 60pF) • 100% Avalanche Tested TM Description SuperFETTM is, Farichild’s proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy.