FCI7N60
Features
- 650V @TJ = 150°C
- Typ. RDS(on) = 0.53Ω
- Ultra Low Gate Charge (typ. Qg = 25n C)
- Low Effective Output Capacitance (typ. Cosseff. = 60p F)
- 100% Avalanche Tested
Description
Super FETTM is, Farichild’s proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. Consequently, Super FET is very suitable for various AC/DC power conversion in switching mode operation for system miniaturization and higher efficiency.
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Absolute Maximum Ratings
Symbol
VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Drain-Source Voltage Drain Current Drain Current Gate-Source voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode...
