FCP099N60E Datasheet - Fairchild Semiconductor

N-Channel MOSFET

FCP099N60E Features

* 650 V @ TJ = 150°C

* Typ. RDS(on) = 87 mΩ

* Ultra Low Gate Charge (Typ. Qg = 88nC)

* Low Effective Output Capacitance (Typ. Coss(eff.) = 309 pF)

* 100% Avalanche Tested

* RoHS Compliant Applications

* Telecom / Sever Power Supplies

FCP099N60E General Description

SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switchi.

FCP099N60E Datasheet (714.83 KB)

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Datasheet Details

Part number:

FCP099N60E

Manufacturer:

Fairchild Semiconductor

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714.83 KB

Description:

N-channel mosfet.
FCP099N60E N-Channel SuperFET® II Easy-Drive MOSFET FCP099N60E N-Channel SuperFET® II Easy-Drive MOSFET 600 V, 37 A, 99 mΩ June 2016 Feat.

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FCP099N60E N-Channel MOSFET Fairchild Semiconductor

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FCP099N60E Features

FCP099N60E General Description

Datasheet Details

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