FCP125N60E
Features
- 650 V @TJ = 150°C
- Typ. RDS(on) = 102 mΩ
- Ultra Low Gate Charge (Typ. Qg = 75 n C)
- Low Effective Output Capacitance (Typ. Coss(eff) = 258 p F)
- 100% Avalanche Tested
- Ro HS pliant
Applications
- Tele / Sever Power Supplies
- Industrial Power Supplies
Description
Super FET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, Super FET II MOSFET easy-drive series offers slightly slower rise and fall times pared to the Super FET II MOSFET series. Noted by the “E” part number suffix, this family helps manage EMI issues and allows for easier design implementation. For faster switching in applications where switching losses must be at an absolute minimum, please consider the...
