FCP600N60Z Key Features
- 650 V @TJ = 150°C
- Max. RDS(on) = 600 mΩ
- Ultra Low Gate Charge (Typ. Qg = 20 nC)
- Low Effective Output Capacitance (Typ. Coss.eff = 74 pF)
- 100% Avalanche Tested
- ESD Improved Capacity
- Part: FCP600N60Z
- Description: N-Channel MOSFET
- Manufacturer: Fairchild Semiconductor
- Size: 362.38 KB
Other FCP600N60Z Datasheets
| Manufacturer | Part Number | Description |
|---|---|---|
onsemi |
FCP600N60Z | N-Channel MOSFET |
Inchange Semiconductor |
FCP600N60Z | N-Channel MOSFET |