FCP600N60Z Datasheet | onsemi

MOSFET - N-Channel, SUPERFET) II 600 V, 7.4 A, 600 m W FCP600N60Z, FCPF600N60Z Description SUPERFET II MOSFET is onsemi’s brand- new high voltage super- junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on- resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SUPERFET II MOSFET is very suitable for the switching power applications such as PFC, server/tele power, FPD TV power, ATX power and industrial power applications. Features - 650 V @ TJ = 150C - Typ. RDS(on) = 510 m W - Ultra Low Gate Charge (Typ. Qg = 20 n C) - Low Effective Output Capacitance (Typ. Coss(eff.) = 74 p F) - 100% Avalanche Tested - ESD Improved Capacity - Ro HS pliant Applications - LCD/LED/PDP TV and Monitor Lighting - Solar Inverter - AC- DC Power Supply DATA SHEET .onsemi. VDSS RDS(ON) MAX ID MAX 600 V 0.6 W @ 10 V 7.4 A- - Drain current limited by maximum junction temperature. TO- 220- 3LD CASE 340AT TO- 220 Fullpack, 3- Lead / TO- 220F- 3SG CASE 221AT MARKING DIAGRAM FCP(F)60...