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FCP600N60Z - N-Channel MOSFET

General Description

® ® SuperFET II MOSFET is Fairchild Semiconductor ’s first generation of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance.This advanced technology is tailored to minimize conduction loss, pr

Key Features

  • 650 V @TJ = 150°C.
  • Max. RDS(on) = 600 mΩ.
  • Ultra Low Gate Charge (Typ. Qg = 20 nC).
  • Low Effective Output Capacitance (Typ. Coss. eff = 74 pF).
  • 100% Avalanche Tested.
  • ESD Improved Capacity.

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Full PDF Text Transcription (Reference)

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FCP600N60Z / FCPF600N60Z N-Channel MOSFET March 2013 FCP600N60Z / FCPF600N60Z N-Channel SuperFET® II MOSFET 600 V, 7.4 A, 600 mΩ Features • 650 V @TJ = 150°C • Max. RDS(on) = 600 mΩ • Ultra Low Gate Charge (Typ. Qg = 20 nC) • Low Effective Output Capacitance (Typ. Coss.eff = 74 pF) • 100% Avalanche Tested • ESD Improved Capacity Description ® ® SuperFET II MOSFET is Fairchild Semiconductor ’s first generation of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance.This advanced technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy.