FCP600N60Z Datasheet | Fairchild Semiconductor

FCP600N60Z / FCPF600N60Z N-Channel MOSFET March 2013 FCP600N60Z / FCPF600N60Z N-Channel Super FET® II MOSFET 600 V, 7.4 A, 600 mΩ Features - 650 V @TJ = 150°C - Max. RDS(on) = 600 mΩ - Ultra Low Gate Charge (Typ. Qg = 20 n C) - Low Effective Output Capacitance (Typ. Coss.eff = 74 p F) - 100% Avalanche Tested - ESD Improved Capacity Description ® ® Super FET II MOSFET is Fairchild Semiconductor ’s first generation of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance.This advanced technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. Consequently, Super FETII MOSFET is suitable for various AC/DC power conversion for system miniaturization and higher efficiency. Applications - LCD / LED / PDP TV and Monitor Lighting - Solar Inverter - AC-DC Power Supply TO-220 GD S TO-220F MOSFET Maximum Ratings TC = 25o C unless otherwise noted Symbol VDSS VGSS ID IDM EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Drain Current Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt MOSFET dv/dt Power Dissipation (TC = 25o C) - Derate above 25o C 89 0.71 -55 to +150 300 - DC - AC -Continuous (TC = 25o C) -Continuous (TC = 100o C) - Pulsed (Note 1) (Note 2) (Note 1) (Note 1) (Note 3) (f > 1 Hz) 7.4 4.7 22.2 135 1.5 0.89 20 100 28 0.22 FCP600N60Z FCPF600N60Z 600 ±20 ±30 7.4- 4.7- 22.2- Unit V V V A A m J A m J V/ns V/ns W W/o C o C o C Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Purpose, 1/8” from Case for 5 Seconds - Drain current limited by maximum junction temperature Thermal Characteristics Symbol RθJC RθJA Parameter Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient FCP600N60Z FCPF600N60Z 1.4 62.5 4.5...